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| NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2 Collector-Emitter Cutoff Current Emitter-Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Small-Signal Current Gain Current-Gain Bandwidth Product hfe fT IC = 1A, VCE = 10V, f = 1kHz IC = 1A, VCE = 10V, f = 1MHz, Note 3 25 3 - - - - MHz hFE VCE(sat) VBE(on) IC = 1.5A, VCE = 4V IC = 15A, VCE = 4V IC = 15A, IB = 1.5A IC = 25A, IB = 5A IC = 15A, VCE = 4V IC = 25A, VCE = 4V 25 15 - - - - - - - - - - - 75 1.8 4 2.0 4.0 V V V V ICEO ICES IEBO VCE = 60V, IB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 100 - - - - - - - - 1 0.7 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Note 3. fT = |hfe| ftest .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
Price & Availability of NTE393
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